生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X11 |
针数: | 9 | Reach Compliance Code: | unknown |
风险等级: | 5.8 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTORS | 最大集电极电流 (IC): | 150 A |
配置: | COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 75 |
JESD-30 代码: | R-PUFM-X11 | 元件数量: | 3 |
端子数量: | 11 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM150E2Y-HK | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 150A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, MODULE | |
QM150E3Y2HK | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 150A I(C) | |
QM150E3Y-2HK | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 150A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, MODUL | |
QM150E3Y-HK | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 150A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, MODULE | |
QM150HY2H | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 150A I(C) | |
QM150HY-2H | MITSUBISHI |
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HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150HY-H | MITSUBISHI |
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HIGH POWER SWITCHING USE INSULATED TYPE | |
QM15DX24 | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 15A I(C) | |
QM15DX-24 | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15DX2H | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 15A I(C) |