Datasheet > Q67000-S007

Q67000-S007

更新时间： 2024-09-08 22:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	137K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode)

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中文翻译

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数据手册

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Q67000-S007 数据手册

BSS 119

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• V

= 1.6 ...2.6 V

GS(th)

Pin 1

Pin 2

Pin 3

Type

DS(on)

Package

Marking

BSS 119

100 V

0.17 A

6 Ω

SOT-23

sSH

Type

Ordering Code

Tape and Reel Information

BSS 119

Q67000-S007

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

100

DGR

Ω

= 20 k

100

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

± 20

0.17

0.68

0.36

T = 28 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-13-1996

12 3 4 5 6 7 8

中文翻译

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