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PTFA092201EV4R0

更新时间： 2024-11-20 01:04:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
11页 7332K
描述
Thermally-Enhanced High Power RF LDMOS FETs

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中文翻译

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PTFA092201EV4R0 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：FLANGE MOUNT, R-CDFM-F2Reach Compliance Code：compliant
风险等级：5.64外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

PTFA092201EV4R0 数据手册

 浏览型号PTFA092201EV4R0的Datasheet PDF文件第2页浏览型号PTFA092201EV4R0的Datasheet PDF文件第3页浏览型号PTFA092201EV4R0的Datasheet PDF文件第4页浏览型号PTFA092201EV4R0的Datasheet PDF文件第5页浏览型号PTFA092201EV4R0的Datasheet PDF文件第6页浏览型号PTFA092201EV4R0的Datasheet PDF文件第7页 
PTFA092201E  
PTFA092201F  
Thermally-Enhanced High Power RF LDMOS FETs  
220 W, 920 – 960 MHz  
Description  
The PTFA092201E and PTFA092201F are 220-watt, internally-  
matched LDMOS FETs intended for EDGE and WCDMA applications  
in the 920 to 960 MHz band. Manufactured with Infineon's advanced  
LDMOS process, these devices provide excellent thermal  
performance and superior reliability.  
PTFA092201E  
Package H-36260-2  
PTFA092201F  
Package H-37260-2  
Features  
2-Carrier WCDMA Performance  
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA  
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,  
3.84 MHz bandwidth  
•
Pb-free, RoHS-compliant and thermally-enhanced  
packages  
•
•
Broadband internal matching  
60  
50  
40  
30  
20  
10  
0
-30  
-35  
-40  
-45  
-50  
-55  
-60  
Typical two-carrier WCDMA performance at  
960 MHz, 30 V  
- Average output power = 55 W  
- Linear Gain = 18.5 dB  
- Efficiency = 30%  
- Intermodulation distortion = –37 dBc  
- Adjacent channel power = –39 dBc  
IMD  
ACPR  
•
•
Typical CW performance, 960 MHz, 30 V  
- Output power at P–1dB = 250 W  
- Gain = 17.5 dB  
Gain  
Efficiency  
- Efficiency = 59%  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
30  
35  
40  
45  
50  
Output Power, Avg. (dBm)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 10:1 VSWR @ 30 V,  
220 W (CW) output power  
RF Characteristics  
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test  
fixture)  
V
DD  
= 30 V, I  
= 1850 mA, P  
= 55 W average  
OUT  
DQ  
ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF  
1
2
Characteristic  
Symbol  
Min  
—
Typ  
–37  
18.5  
30  
Max  
—
Unit  
dBc  
dB  
Intermodulation Distortion  
Gain  
IMD  
G
ps  
—
—
Drain Efficiency  
hD  
—
—
%
All published data at T  
= 25 °C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 03.2, 2016-06-21  
1234567...11

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