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PTFA092201FV4R0XTMA1

更新时间： 2024-11-23 21:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 7319K
描述
RF Power Field-Effect Transistor,

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中文翻译

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PTFA092201FV4R0XTMA1 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.7峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

PTFA092201FV4R0XTMA1 数据手册

 浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第2页浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第3页浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第4页浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第5页浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第6页浏览型号PTFA092201FV4R0XTMA1的Datasheet PDF文件第7页 
PTFA092201E  
PTFA092201F  
Thermally-Enhanced High Power RF LDMOS FETs  
220 W, 920 – 960 MHz  
Description  
The PTFA092201E and PTFA092201F are 220-watt, internally-  
matched LDMOS FETs intended for EDGE and WCDMA applications  
in the 920 to 960 MHz band. Manufactured with Infineon's advanced  
LDMOS process, these devices provide excellent thermal  
performance and superior reliability.  
PTFA092201E  
Package H-36260-2  
PTFA092201F  
Package H-37260-2  
Features  
2-Carrier WCDMA Performance  
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA  
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,  
3.84 MHz bandwidth  
•
Pb-free, RoHS-compliant and thermally-enhanced  
packages  
•
•
Broadband internal matching  
60  
50  
40  
30  
20  
10  
0
-30  
-35  
-40  
-45  
-50  
-55  
-60  
Typical two-carrier WCDMA performance at  
960 MHz, 30 V  
- Average output power = 55 W  
- Linear Gain = 18.5 dB  
- Efficiency = 30%  
- Intermodulation distortion = –37 dBc  
- Adjacent channel power = –39 dBc  
IMD  
ACPR  
•
•
Typical CW performance, 960 MHz, 30 V  
- Output power at P–1dB = 250 W  
- Gain = 17.5 dB  
Gain  
Efficiency  
- Efficiency = 59%  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
30  
35  
40  
45  
50  
Output Power, Avg. (dBm)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 10:1 VSWR @ 30 V,  
220 W (CW) output power  
RF Characteristics  
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test  
fixture)  
V
DD  
= 30 V, I  
= 1850 mA, P  
= 55 W average  
OUT  
DQ  
ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF  
1
2
Characteristic  
Symbol  
Min  
—
Typ  
–37  
18.5  
30  
Max  
—
Unit  
dBc  
dB  
Intermodulation Distortion  
Gain  
IMD  
G
ps  
—
—
Drain Efficiency  
hD  
—
—
%
All published data at T  
= 25 °C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 03.2, 2016-06-21  
1234567...11

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