Datasheet > PTFA142401ELV4

PTFA142401ELV4

更新时间： 2024-11-23 19:59:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	461K
描述
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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PTFA142401ELV4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.7
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	625 W	子类别：	FET General Purpose Power
Base Number Matches：	1

PTFA142401ELV4 数据手册

PTFA142401EL

PTFA142401FL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET

240 W, 1450 – 1500 MHz

Description

The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs

designed for DVB and DAB applications in the 1450 to 1500 MHz

frequency band. Features include internal I/O matching and thermally-

enhanced packages with slotted or earless flanges. Manufactured

with Infineon's advanced LDMOS process, these devices provide

excellent thermal performance and superior reliability.

PTFA142401EL

Package H-33288-2

PTFA142401FL

Package H-34288-2

Features

DVB-T Drive-up

V_DD= 30 V, I_DQ= 2000 mA, ƒ = 1475 MHz,

DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW

ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW

•

Pb-free, RoHS-compliant and thermally-enhanced

packages with less than 0.25 micron Au plating

•

Broadband internal matching

-25

-30

-35

-40

-45

Typical DVB-T performance at 1475 MHz, 30 V

- Average output power = 47.0 dBm

- Linear Gain = 16.0 dB

- Efficiency = 27.5%

- Adjacent channel power = –32 dBc

Efficiency

•

Typical CW performance, 1475 MHz, 30 V

- Output power at P–1dB = 240 W

- Efficiency = 52%

ACPR Hi

ACPR Low

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

200 W (CW) output power

Average Output Power (dBm)

RF Characteristics

DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 30 V, I = 2.0 A, P = 50 W average

OUT

ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

16.5

27.5

–32

Max

—

Unit

Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio ( 4.3 MHz offset, 30 kHz RBW)

ACPR

—

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet – DISCONTINUED 1 of 10

Rev. 05, 2013-05-29

12 3 4 5 6 7...10

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与PTFA142401ELV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA142401ELV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA142401FL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PTFA142401FLV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA180701E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 7
PTFA180701E-70W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA180701EF	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA180701EV4R0	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA180701EV4R0XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA180701EV4R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA180701EV4R250XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor,

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