Datasheet > PTFA180701EF

PTFA180701EF

更新时间： 2024-11-20 01:07:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	4139K
描述
Thermally-Enhanced High Power RF LDMOS FETs

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PTFA180701EF 数据手册

PTFA180701E

PTFA180701F

Thermally-Enhanced High Power RF LDMOS FETs

70 W, 1805 – 1880 MHz

Description

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed

for GSM and GSM EDGE power amplifier applications in the 1805 MHz to

1880 MHz band. Features include input and output matching, and thermally-

enhanced packages with slotted or earless flanges. Manufactured with

Infineon's advanced LDMOS process, these devices provide excellent

thermal performance and superior reliability.

PTFA180701E

Package H-36265-2

PTFA180701F

Package H-37265-2

Features

EDGE EVM Performance

V_DD= 28 V, I_DQ= 550 mA, ƒ = 1836.6 MHz

•

Thermally-enhanced packages, Pb-free and

RoHS-compliant

•

Broadband internal matching

Typical EDGE performance

- Average output power = 44 dBm

- Gain = 16.5 dB

- Efficiency = 40.5%

- EVM = 2.0%

Efficiency

•

Typical CW performance

- Output power at P–1dB = 72 W

- Gain = 15.5 dB

- Efficiency = 59%

Integrated ESD protection: Human Body

Model, Class 2 (minimum)

EVM

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 28 V,

70 W (CW) output power

Output Power, avg. (dBm)

RF Characteristics

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

= 550 mA, P = 44 dBm, ƒ = 1836.6 MHz

OUT

Characteristic

Symbol

EVM RMS

ACPR

Min

—

Typ

2.0

Max

—

Unit

Error Vector Magnitude

Modulation Spectrum

@ 400 kHz

@ 600 kHz

—

–62

–76

16.5

40.5

—

dBc

ACPR

—

Gain

—

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 03.2, 2016-06-21

12 3 4 5 6 7...11

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