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PTFA092213ELV4 PDF预览

PTFA092213ELV4

更新时间： 2024-11-23 20:11:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网放大器晶体管
页数 文件大小 规格书
10页 573K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-33288-6, 2 PIN

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PTFA092213ELV4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTFA092213ELV4 数据手册

 浏览型号PTFA092213ELV4的Datasheet PDF文件第2页浏览型号PTFA092213ELV4的Datasheet PDF文件第3页浏览型号PTFA092213ELV4的Datasheet PDF文件第4页浏览型号PTFA092213ELV4的Datasheet PDF文件第5页浏览型号PTFA092213ELV4的Datasheet PDF文件第6页浏览型号PTFA092213ELV4的Datasheet PDF文件第7页 
PTFA092213EL  
PTFA092213FL  
Thermally-Enhanced High Power RF LDMOS FETs  
220 W, 920 – 960 MHz  
Description  
The PTFA092213EL and PTFA092213FL are 220-watt, internally-  
matched LDMOS FETs designed for use in cellular power amplifier  
applications in the 920 to 960 MHz band. These devices feature  
internal I/O matching and thermally-enhanced open-cavity ceramic  
packages with slotted or earless flanges. Manufactured with Infineon's  
advanced LDMOS process, these devices provide excellent thermal  
performance and superior reliability.  
PTFA092213EL  
Package H-33288-6  
PTFA092213FL  
Package H-34288-6  
Features  
Two-carrier WCDMA Performance  
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz,  
3GPP WCDMA signal, P/AR = 8 dB,  
10 MHz carrier spacing, 3.84 MHz Bandwidth  
•
•
Broadband internal matching  
Typical two-carrier WCDMA performance at  
960 MHz, 30 V  
40  
30  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
- Average output power = 50 W  
- Linear Gain = 17.5 dB  
- Efficiency = 29%  
- Intermodulation distortion = –32 dBc  
- Adjacent channel power = –42.5 dBc  
Gain  
20  
Efficiency  
10  
•
•
Typical CW performance, 960 MHz, 30 V  
- Output power at P–1dB = 250 W  
- Linear Gain = 17.5 dB  
0
IMD_lower  
- Efficiency = 52%  
-10  
-20  
-30  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
ACPR  
IMD_upper  
35  
•
•
Excellent thermal stability, low HCI drift  
30  
40  
45  
50  
Capable of handling 10:1 VSWR @ 30 V,  
220 W (CW) output power  
Output Power (dBm)  
•
Pb-free, RoHS-compliant  
RF Characteristics  
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test  
fixture)  
V
DD  
= 30 V, I  
= 1850 mA, P  
= 50 W average  
OUT  
DQ  
ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF  
1
2
Characteristic  
Symbol  
Min  
—
Typ  
17.5  
29  
Max  
—
Unit  
dB  
Gain  
G
ps  
Drain Efficiency  
hD  
—
—
%
Intermodulation Distortion  
IMD  
—
–32  
—
dBc  
All published data at T  
= 25 °C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 02, 2009-07-29  
1234567...10

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