Datasheet > PTFA092211FL

PTFA092211FL

更新时间： 2024-11-23 06:05:43

品牌	Logo	应用领域
英飞凌 - INFINEON		射频
页数	文件大小	规格书
10页	417K
描述
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

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中文翻译

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技术参数
数据手册

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PTFA092211FL 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	700 W
子类别：	FET General Purpose Power	Base Number Matches：	1

PTFA092211FL 数据手册

PTFA092211EL

PTFA092211FL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

220 W, 920 – 960 MHz

Description

The PTFA092211EL and PTFA092211FL are 220-watt, internally-

matched LDMOS FETs intended for EDGE and WCDMA applications

in the 920 to 960 MHz band. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA092211EL

Package H-33288-2

PTFA092211FL

Package H-34288-2

Features

Two-carrier WCDMA Performance

V_DD= 30 V, I_DQ= 1.50 A, ƒ = 940 MHz, 3GPP WCDMA

signal, PAR = 6.5 dB, 5 MHz carrier spacing

•

Broadband internal matching

Typical two-carrier WCDMA performance at

940 MHz, 30 V

-20

-25

-30

-35

-40

-45

-50

- Average output power = 50 W

- Linear Gain = 18.0 dB

- Efficiency = 30%

- Intermodulation distortion = –37 dBc

•

Typical CW performance, 940 MHz, 30 V

- Output power at P–1dB = 250 W

- Gain = 17.0 dB

Efficiency

- Efficiency = 59%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

ACP

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

220 W (CW) output power

40 41 42 43 44 45 46 47 48 49

Output Power, Avg. (dBm)

•

Pb-free, RoHS-compliant and thermally-enhanced

packages

RF Characteristics

Two-carrierWCDMA Measurements (tested in Infineon test fixture)

= 30 V, I = 1750 mA, P = 50 W (AVG),

OUT

ƒ = 937.5 MHz, ƒ = 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

17.0

28.5

—

Typ

18.0

Max

—

Unit

Drain Efficiency

h_D

—

Intermodulation Distortion

IMD

–34

–32

dBc

All published data at T

= 25 °C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 02, 2009-05-27

12 3 4 5 6 7...10

中文翻译

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与PTFA092211FL相关器件

型号	品牌	获取价格	描述	数据表
PTFA092211FL-250W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA092213EL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
PTFA092213ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
PTFA092213FLV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FLV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FLV5XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA142401EL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PTFA142401ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA142401ELV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic

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