Datasheet > PTFA092213EL

PTFA092213EL

更新时间： 2024-11-19 09:58:43

品牌	Logo	应用领域
英飞凌 - INFINEON		射频
页数	文件大小	规格书
10页	583K
描述
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz

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PTFA092213EL 数据手册

PTFA092213EL

PTFA092213FL

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

220 W, 920 – 960 MHz

Description

The PTFA092213EL and PTFA092213FL are 220-watt, internally-

matched LDMOS FETs designed for use in cellular power ampliﬁer

applications in the 920 to 960 MHz band. These devices feature

internal I/O matching and thermally-enhanced open-cavity ceramic

packages with slotted or earless ﬂanges. Manufactured with Inﬁneon's

advanced LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA092213EL

Package H-33288-6

PTFA092213FL

Package H-34288-4/2

Features

Two-carrier WCDMA Performance

V_DD= 30 V, I_DQ= 1850 mA, ƒ = 960 MHz,

3GPP WCDMA signal, PAR = 8 dB,

•

Broadband internal matching

Typical two-carrier WCDMA performance at

960 MHz, 30 V

10 MHz carrier spacing, 3.84 MHz Bandwidth

- Average output power = 50 W

- Linear Gain = 17.5 dB

- Efﬁciency = 29%

- Intermodulation distortion = –32 dBc

- Adjacent channel power = –42.5 dBc

-20

-25

-30

-35

-40

-45

-50

-55

Gain

Efficiency

•

Typical CW performance, 960 MHz, 30 V

- Output power at P

= 250 W

1dB

- Linear Gain = 17.5 dB

- Efﬁciency = 52%

IMD_lower

-10

-20

-30

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

ACPR

IMD_upper

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

220 W (CW) output power

Output Power (dBm)

•

Pb-free, RoHS-compliant

RF Characteristics

Two-carrier WCDMA Measurements (not subject to production test—veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 30 V, I = 1850 mA, P = 50 W average, ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

17.5

Max

—

Unit

Gain

Drain Efﬁciency

Intermodulation Distortion

—

IMD

—

–32

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 04, 2010-11-04

12 3 4 5 6 7...10

中文翻译

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与PTFA092213EL相关器件

型号	品牌	获取价格	描述	数据表
PTFA092213ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
PTFA092213FLV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FLV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092213FLV5XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA142401EL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PTFA142401ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA142401ELV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA142401FL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
PTFA142401FLV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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