Datasheet > PTFA092201FV4

PTFA092201FV4

更新时间： 2024-11-19 21:01:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	366K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
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PTFA092201FV4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.72
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	700 W
子类别：	FET General Purpose Power	Base Number Matches：	1

PTFA092201FV4 数据手册

PTFA092201E

PTFA092201F

Thermally-Enhanced High Power RF LDMOS FETs

220 W, 920 – 960 MHz

Description

The PTFA092201E and PTFA092201F are 220-watt, internally-

matched LDMOS FETs intended for EDGE and WCDMA applications

in the 920 to 960 MHz band. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA092201E

Package H-36260-2

PTFA092201F

Package H-37260-2

Features

2-Carrier WCDMA Performance

V_DD= 30 V, I_DQ= 1850 mA, ƒ = 960 MHz, 3GPP WCDMA

signal, P/A R = 8.1 dB, 10 MHz carrier spacing,

3.84 MHz bandwidth

•

Pb-free, RoHS-compliant and thermally-enhanced

packages

•

Broadband internal matching

-30

-35

-40

-45

-50

-55

-60

Typical two-carrier WCDMA performance at

960 MHz, 30 V

- Average output power = 55 W

- Linear Gain = 18.5 dB

- Efficiency = 30%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –39 dBc

IMD

ACPR

•

Typical CW performance, 960 MHz, 30 V

- Output power at P–1dB = 250 W

- Gain = 17.5 dB

Gain

Efficiency

- Efficiency = 59%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

Output Power, Avg. (dBm)

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

220 W (CW) output power

RF Characteristics

Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test

fixture)

= 30 V, I

= 1850 mA, P

= 55 W average

OUT

ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF

Characteristic

Symbol

Min

—

Typ

–37

18.5

Max

—

Unit

dBc

Intermodulation Distortion

Gain

IMD

—

Drain Efficiency

h_D

—

All published data at T

= 25 °C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 03.1, 2009-02-20

12 3 4 5 6 7...11

中文翻译

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与PTFA092201FV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA092201FV4R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201FV4R0XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA092201FV4R250	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA092201FV4R250XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA092211EL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 2
PTFA092211ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
PTFA092211FL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 2
PTFA092211FL-250W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA092213EL	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
PTFA092213ELV4	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel

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