5秒后页面跳转
PTFA091503ELV4R0XTMA1 PDF预览

PTFA091503ELV4R0XTMA1

更新时间: 2024-11-20 01:08:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 766K
描述
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz

PTFA091503ELV4R0XTMA1 数据手册

 浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第2页浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第3页浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第4页浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第5页浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第6页浏览型号PTFA091503ELV4R0XTMA1的Datasheet PDF文件第7页 
PTFA091503EL  
Thermally-Enhanced High Power RF LDMOS FET  
150 W, 920 – 960 MHz  
Description  
PTFA091503EL  
Package H-33288-6  
The PTFA091503EL is a 150-watt, internally-matched FET intended  
for use in power amplifier applications in the 920 to 960 MHz band.  
This device features internal I/O matching and thermally-enhanced  
open cavity ceramic package.Manufactured with Infineon's advanced  
LDMOS process, this device provides excellent thermal performance  
and superior reliability.  
Features  
Two-carrier WCDMA Performance  
VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP  
WCDMA signal, PAR = 8 dB, 10 MHz carrier  
spacing, 3.84MHz Bandwidth  
•ꢀ Broadbandꢀinternalꢀmatching  
•ꢀ Typicalꢀtwo-carrierꢀWCDMAꢀperformanceꢀatꢀ  
960 MHz, 30 V  
- Average output power = 32 W  
- Linear Gain = 17 dB  
- Efficiency = 29%  
- Intermodulation distortion = –37 dBc  
- Adjacent channel power = –39 dBc  
60  
50  
40  
30  
20  
10  
0
-30  
-35  
-40  
-45  
-50  
-55  
-60  
ACPR  
IMD  
•ꢀ TypicalꢀCWꢀperformance,ꢀ960ꢀMHz,ꢀ30ꢀVꢀ  
- Output power at P  
= 150 W  
1dB  
- Linear Gain = 17 dB  
- Efficiency = 54%  
Efficiency  
•ꢀ IntegratedꢀESDꢀprotection:ꢀHumanꢀBodyꢀModel,ꢀ  
Gain  
Class 2 (minimum)  
•ꢀ Excellentꢀthermalꢀstability,ꢀlowꢀHCIꢀdrift  
•ꢀ Capableꢀofꢀhandlingꢀ10:1ꢀVSWRꢀ@ꢀ30ꢀV,ꢀ  
150 W (CW) output power  
30  
35  
40  
45  
50  
Output Power (dBm)  
•ꢀ Pb-free,ꢀRoHS-compliant  
RF Characteristics  
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test  
fixture)  
V
= 30 V, I  
= 1250 mA, P  
= 32 W average  
DD  
DQ  
OUT  
ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF  
1
2
Characteristic  
Gain  
Symbol  
Min  
Typ  
17  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Intermodulation Distortion  
hD  
29  
%
IMD  
–37  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 04, 2016-06-16  

与PTFA091503ELV4R0XTMA1相关器件

型号 品牌 获取价格 描述 数据表
PTFA091503ELV4R250 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FET 15
PTFA091503ELV4R250XTMA1 INFINEON

获取价格

RF Power Field-Effect Transistor,
PTFA092201E INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
PTFA092201E-220W INFINEON

获取价格

RF Power Field-Effect Transistor
PTFA092201EF INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4 INFINEON

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PTFA092201EV4R0 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4R0XTMA1 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4R250 INFINEON

获取价格

RF Power Field-Effect Transistor,
PTFA092201EV4R250XTMA1 INFINEON

获取价格

Thermally-Enhanced High Power RF LDMOS FETs