Datasheet > PTFA091503ELV4R250XTMA1

PTFA091503ELV4R250XTMA1

更新时间： 2024-11-19 19:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	489K
描述
RF Power Field-Effect Transistor,

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PTFA091503ELV4R250XTMA1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

PTFA091503ELV4R250XTMA1 数据手册

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PTFA091503EL

Thermally-Enhanced High Power RF LDMOS FET

150 W, 920 – 960 MHz

Description

PTFA091503EL

Package H-33288-6

The PTFA091503EL is a 150-watt, internally-matched FET intended

for use in power ampliﬁer applications in the 920 to 960 MHz band.

This device features internal I/O matching and thermally-enhanced

open cavity ceramic package.Manufactured with Inﬁneon's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability.

Features

Two-carrier WCDMA Performance

V_DD= 30 V, I_DQ= 1250 mA, ƒ = 960 MHz, 3GPP

WCDMA signal, PAR = 8 dB, 10 MHz carrier

spacing, 3.84MHz Bandwidth

•ꢀ Broadbandꢀinternalꢀmatching

•ꢀ Typicalꢀtwo-carrierꢀWCDMAꢀperformanceꢀatꢀ

960 MHz, 30 V

- Average output power = 32 W

- Linear Gain = 17 dB

- Efﬁciency = 29%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –39 dBc

-30

-35

-40

-45

-50

-55

-60

ACPR

IMD

•ꢀ TypicalꢀCWꢀperformance,ꢀ960ꢀMHz,ꢀ30ꢀVꢀ

- Output power at P

= 150 W

1dB

- Linear Gain = 17 dB

- Efﬁciency = 54%

Efficiency

•ꢀ IntegratedꢀESDꢀprotection:ꢀHumanꢀBodyꢀModel,ꢀ

Gain

Class 2 (minimum)

•ꢀ Excellentꢀthermalꢀstability,ꢀlowꢀHCIꢀdrift

•ꢀ Capableꢀofꢀhandlingꢀ10:1ꢀVSWRꢀ@ꢀ30ꢀV,ꢀ

150 W (CW) output power

Output Power (dBm)

•ꢀ Pb-free,ꢀRoHS-compliant

RF Characteristics

Two-carrier WCDMA Measurements (not subject to production test—veriﬁed by design/characterization in Inﬁneon test

ﬁxture)

= 30 V, I

= 1250 mA, P

= 32 W average

OUT

ƒ = 950 MHz, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

—

IMD

—

–37

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 05, 2017-07-19

12 3 4 5 6 7...11

中文翻译

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与PTFA091503ELV4R250XTMA1相关器件

型号	品牌	获取价格	描述	数据表
PTFA092201E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
PTFA092201E-220W	INFINEON	获取价格	RF Power Field-Effect Transistor
PTFA092201EF	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PTFA092201EV4R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201EV4R250	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA092201EV4R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
PTFA092201FV4	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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