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PMBT2222,215 PDF预览

PMBT2222,215

更新时间: 2024-11-15 21:11:27
品牌 Logo 应用领域
恩智浦 - NXP 驱动开关光电二极管晶体管
页数 文件大小 规格书
12页 98K
描述
PMBT2222; PMBT2222A - NPN switching transistors TO-236 3-Pin

PMBT2222,215 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:6.89其他特性:HIGH CURRENT DRIVER
最大集电极电流 (IC):0.6 A基于收集器的最大容量:8 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):35 ns
VCEsat-Max:1.6 VBase Number Matches:1

PMBT2222,215 数据手册

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PMBT2222; PMBT2222A  
NPN switching transistors  
Rev. 6 — 12 November 2010  
Product data sheet  
1. Product profile  
1.1 General description  
NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)  
plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP complement  
JEDEC  
PMBT2222  
SOT23  
TO-236AB  
PMBT2907  
PMBT2222A  
PMBT2907A  
1.2 Features and benefits  
„ High current (max. 600 mA)  
„ Low voltage (max. 40 V)  
1.3 Applications  
„ Switching and linear amplification  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-emitter voltage  
PMBT2222  
open base  
-
-
-
-
-
30  
V
PMBT2222A  
-
40  
V
IC  
collector current  
DC current gain  
-
600  
300  
mA  
[1]  
[1]  
[1]  
hFE  
VCE = 10 V;  
IC = 150 mA  
100  
PMBT2222  
VCE = 10 V;  
IC = 500 mA  
30  
40  
-
-
-
-
PMBT2222A  
VCE = 10 V;  
IC = 500 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 

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