生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.68 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 300 MHz | 最大关闭时间(toff): | 285 ns |
最大开启时间(吨): | 35 ns | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBT2222ATRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | |
PMBT2222AYS | NXP |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
PMBT2222AYS | NEXPERIA |
获取价格 |
40 V, 600 mA, double NPN switching transistorProduction | |
PMBT2222AYS-Q | NEXPERIA |
获取价格 |
40 V, 600 mA, double NPN switching transistorProduction | |
PMBT2222-T | NXP |
获取价格 |
TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLAST | |
PMBT2222T/R | NXP |
获取价格 |
TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLAST | |
PMBT2222TRL | NXP |
获取价格 |
TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
PMBT2222TRL | YAGEO |
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Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
PMBT2222TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
PMBT2227AYS-Q | NEXPERIA |
获取价格 |
40 V, 600 mA, NPN/PNP double switching transistorProduction |