Datasheet > PMBT2222AM

PMBT2222AM

更新时间： 2023-09-03 20:31:41

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	215K
描述
40 V, 600 mA NPN switching transistorProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PMBT2222AM 数据手册

PMBT2222AM

40 V, 600 mA NPN switching transistor

21 September 2018

Product data sheet

1. General description

NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device

(SMD) plastic package.

PNP complement: PMBT2907AM

2. Features and benefits

•

High current (max. 600 mA)

•

Low voltage (max. 40V)

Leadless ultra small SMD plastic package

Low package height of 0.50 mm

Power dissipation comparable to SOT23

3. Applications

•

Switching and linear applications

Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

600

800

300

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

V_CE= 10 V; I_C= 150 mA

V_CE= 10 V; I_C= 500 mA

[1]

100

[1] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...12

中文翻译

下载PDF

与PMBT2222AM相关器件

型号	品牌	获取价格	描述	数据表
PMBT2222AMB	NEXPERIA	获取价格	40 V, 600 mA NPN switching transistorProduction
PMBT2222A-Q	NEXPERIA	获取价格	NPN switching transistorProduction
PMBT2222AQA	NEXPERIA	获取价格	40 V, 600 mA NPN switching transistorProduction
PMBT2222A-T	NXP	获取价格	TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLAST
PMBT2222AT/R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 600MA I(C) \| SOT-23
PMBT2222ATRL	YAGEO	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
PMBT2222ATRL13	YAGEO	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
PMBT2222AYS	NXP	获取价格	SMALL SIGNAL TRANSISTOR
PMBT2222AYS	NEXPERIA	获取价格	40 V, 600 mA, double NPN switching transistorProduction
PMBT2222AYS-Q	NEXPERIA	获取价格	40 V, 600 mA, double NPN switching transistorProduction