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PMBFJ212T/R PDF预览

PMBFJ212T/R

更新时间: 2024-02-15 21:36:10
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
12页 100K
描述
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

PMBFJ212T/R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMBFJ212T/R 数据手册

 浏览型号PMBFJ212T/R的Datasheet PDF文件第2页浏览型号PMBFJ212T/R的Datasheet PDF文件第3页浏览型号PMBFJ212T/R的Datasheet PDF文件第4页浏览型号PMBFJ212T/R的Datasheet PDF文件第5页浏览型号PMBFJ212T/R的Datasheet PDF文件第6页浏览型号PMBFJ212T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBFJ210; PMBFJ211;  
PMBFJ212  
N-channel field-effect transistors  
Product specification  
1997 Dec 01  
File under Discrete Semiconductors, SC07  

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