生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.18 | 其他特性: | LOW NOISE |
配置: | SINGLE | 最小漏源击穿电压: | 25 V |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 2.5 pF |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBFJ308-TAPE-7 | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | |
PMBFJ308TRL | YAGEO |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon | |
PMBFJ308TRL | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | |
PMBFJ308TRL13 | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | |
PMBFJ309 | NXP |
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N-channel silicon field-effect transistors | |
PMBFJ309,215 | NXP |
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N-channel silicon FET TO-236 3-Pin | |
PMBFJ309-T | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FE | |
PMBFJ309T/R | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 12MA I(DSS) | TO-236 | |
PMBFJ309TRL | NXP |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | |
PMBFJ309TRL | YAGEO |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon |