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PMBFJ308T/R PDF预览

PMBFJ308T/R

更新时间: 2024-11-26 20:30:51
品牌 Logo 应用领域
飞利浦 - PHILIPS 放大器光电二极管晶体管
页数 文件大小 规格书
10页 518K
描述
Transistor

PMBFJ308T/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:NFET 技术:JUNCTION
JESD-609代码:e3最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.25 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

PMBFJ308T/R 数据手册

 浏览型号PMBFJ308T/R的Datasheet PDF文件第2页浏览型号PMBFJ308T/R的Datasheet PDF文件第3页浏览型号PMBFJ308T/R的Datasheet PDF文件第4页浏览型号PMBFJ308T/R的Datasheet PDF文件第5页浏览型号PMBFJ308T/R的Datasheet PDF文件第6页浏览型号PMBFJ308T/R的Datasheet PDF文件第7页 

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