Datasheet > PKN2510

PKN2510

更新时间： 2024-11-15 01:25:27

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页数	文件大小	规格书
5页	1398K
描述
N-Ch 20V Fast Switching MOSFETs

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PKN2510 数据手册

PKN2510

N-Ch 20V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent Cdv/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

20V

26mΩ

6.0A

Description

SOT23 Pin Configuration

The PKN2510 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN2510 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 4.5V¹

Pulsed Drain Current²

6.0

5.0

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation³

℃

0.66

Storage Temperature Range

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Max.

Unit

R_θJA

Thermal Resistance Junction-ambient ¹

120

℃/W

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