PHP83N06T

更新时间： 2024-10-31 21:53:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	246K
描述
TrenchMOS Standard Level FET

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PHP83N06T 技术参数

PHP83N06T

TrenchMOS™ Standard Level FET

Rev. 01 — 11 January 2002

Product data

M3D307

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™¹technology, featuring very low on-state resistance.

Product availability:

PHP83N06T in SOT78 (TO-220AB).

2. Features

■ TrenchMOS™ technology

■ Fast switching

■ Low on-state resistance.

3. Applications

■ Switch mode power supplies

■ Uninterruptible power supplies

■ General purpose switching.

4. Pinning information

Table 1: Pinning - SOT78, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

mounting base;

connected to drain (d)

MBB076

MBK106

2 3

SOT78 (TO-220AB)

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

12 3 4 5 6 7...13

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