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PHP8N50E PDF预览

PHP8N50E

更新时间: 2024-10-31 22:24:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
10页 94K
描述
PowerMOS transistors Avalanche energy rated

PHP8N50E 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistors  
Avalanche energy rated  
PHP8N50E, PHB8N50E, PHW8N50E  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
• Repetitive Avalanche Rated  
• Fast switching  
VDSS = 500 V  
ID = 8.5 A  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
g
RDS(ON) 0.85 Ω  
s
GENERAL DESCRIPTION  
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,  
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching  
applications.  
The PHP8N50E is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHW8N50E is supplied in the SOT429 (TO247) conventional leaded package.  
The PHB8N50E is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT429 (TO247)  
PIN  
1
DESCRIPTION  
tab  
tab  
gate  
2
drain1  
source  
3
2
tab drain  
2
1
3
1 2 3  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Tj = 25 ˚C to 150˚C  
-
500  
500  
± 30  
8.5  
V
V
Drain-gate voltage  
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ  
-
Gate-source voltage  
Continuous drain current  
-
V
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
-
A
-
5.4  
A
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total dissipation  
Operating junction and  
storage temperature range  
-
-
34  
147  
150  
A
Tmb = 25 ˚C  
W
˚C  
- 55  
1 It is not possible to make connection to pin 2 of the SOT404 package.  
December 1998  
1
Rev 1.300  

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