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PHP98N03LT PDF预览

PHP98N03LT

更新时间: 2024-10-31 22:24:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
14页 269K
描述
N-channel enhancement mode field-effect transistor

PHP98N03LT 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):183 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0073 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):111 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP98N03LT 数据手册

 浏览型号PHP98N03LT的Datasheet PDF文件第2页浏览型号PHP98N03LT的Datasheet PDF文件第3页浏览型号PHP98N03LT的Datasheet PDF文件第4页浏览型号PHP98N03LT的Datasheet PDF文件第5页浏览型号PHP98N03LT的Datasheet PDF文件第6页浏览型号PHP98N03LT的Datasheet PDF文件第7页 
PHP/PHB/PHD98N03LT  
N-channel enhancement mode field-effect transistor  
Rev. 02 — 18 October 2001  
Product data  
1. Description  
N-channel logic level field-effect power transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
PHP98N03LT in SOT78 (TO-220AB)  
PHB98N03LT in SOT404 (D2-PAK)  
PHD98N03LT in SOT428 (D-PAK).  
2. Features  
Low on-state resistance  
Fast switching.  
3. Applications  
Computer motherboard high frequency DC to DC converters.  
4. Pinning information  
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol  
Pin Description  
Simplified outline  
Symbol  
1
2
3
gate (g)  
d
s
mb  
mb  
mb  
[1]  
drain (d)  
source (s)  
g
mb mounting base,  
connected to drain (d)  
MBB076  
2
2
1
3
1
3
Top view  
MBK091  
MBK116  
MBK106  
1
2 3  
SOT78 (TO-220AB)  
SOT404 (D2-PAK)  
SOT428 (D-PAK)  
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.  
1. TrenchMOS is a trademark of Koniklijke Philips Electronics N.V.  

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