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PHP87N03T PDF预览

PHP87N03T

更新时间: 2024-10-31 22:24:07
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 63K
描述
TrenchMOS transistor Standard level FET

PHP87N03T 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Is Samacsys:N
其他特性:ESD PROTECTED雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.0105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP87N03T 数据手册

 浏览型号PHP87N03T的Datasheet PDF文件第2页浏览型号PHP87N03T的Datasheet PDF文件第3页浏览型号PHP87N03T的Datasheet PDF文件第4页浏览型号PHP87N03T的Datasheet PDF文件第5页浏览型号PHP87N03T的Datasheet PDF文件第6页浏览型号PHP87N03T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
PHP87N03T  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope using  
trench’ technology. The device  
features very low on-state resistance  
and has integral zener diodes giving  
ESD protection up to 2kV. It is  
intended for use in DC-DC  
converters and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)1  
Total power dissipation  
Junction temperature  
Drain-source on-state  
30  
75  
142  
175  
10.5  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 10 V  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
s
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
-
-
-
-
-
-
-
-
30  
30  
20  
75  
61  
240  
142  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Gate-source voltage  
Drain current (DC)1  
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to  
ambient  
-
-
1.05  
K/W  
in free air  
60  
-
K/W  
1 Current limited by package to 75A from a theoretical value of 87A.  
September 1997  
1
Rev 1.100  

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