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PHP87N03LT PDF预览

PHP87N03LT

更新时间: 2024-10-31 22:24:07
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
11页 104K
描述
N-channel TrenchMOS transistor Logic level FET

PHP87N03LT 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:142 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):260 ns
最大开启时间(吨):195 nsBase Number Matches:1

PHP87N03LT 数据手册

 浏览型号PHP87N03LT的Datasheet PDF文件第2页浏览型号PHP87N03LT的Datasheet PDF文件第3页浏览型号PHP87N03LT的Datasheet PDF文件第4页浏览型号PHP87N03LT的Datasheet PDF文件第5页浏览型号PHP87N03LT的Datasheet PDF文件第6页浏览型号PHP87N03LT的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
Logic level FET  
PHP87N03LT, PHB87N03LT  
PHD87N03LT  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
• Low thermal resistance  
• Logic level compatible  
VDSS = 25 V  
ID = 75 A  
R
DS(ON) 9.5 m(VGS = 10 V)  
DS(ON) 10.5 m(VGS = 5 V)  
g
R
s
GENERAL DESCRIPTION  
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.  
Applications:-  
• High frequency computer motherboard d.c. to d.c. converters  
• High current switching  
The PHP87N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB87N03LT is supplied in the SOT404 (D2PAK) surface mounting package.  
The PHD87N03LT is supplied in the SOT428 (DPAK)surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404 (D2PAK)  
SOT428 (DPAK)  
tab  
tab  
PIN  
1
DESCRIPTION  
tab  
gate  
2
drain 1  
source  
2
2
3
1 2 3  
1
3
1
3
tab drain  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
Drain-source voltage  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
25  
25  
± 15  
V
V
V
V
Drain-gate voltage  
Gate-source voltage (DC)  
Gate-source voltage (pulse  
peak value)  
VGSM  
Tj 150 ˚C  
± 20  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
75  
61  
240  
A
A
A
IDM  
Drain current (pulse peak  
value)  
Ptot  
Tj, Tstg  
Total power dissipation  
Operating junction and  
storage temperature  
Tmb = 25 ˚C  
-
142  
175  
W
˚C  
- 55  
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.  
October 1999  
1
Rev 1.600  

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