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PHP3N60

更新时间： 2024-02-21 12:44:17

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	54K
描述
MOSFET POWER TRANSISTOR 600V 4.8A 125W TO-220AB(51.69 k)

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中文翻译

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技术参数
数据手册

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PHP3N60 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	2.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	83 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

PHP3N60 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

PHP3N60

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope featuring high

avalanche energy capability, stable

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Drain-source on-state resistance

600

4.8

125

2.2

Ω

off-state

characteristics,

fast

P_tot

switching and high thermal cycling

performance with low thermal

resistance. Intended for use in

Switched Mode Power Supplies

(SMPS), motor control circuits and

R_DS(ON)

general

applications.

purpose

switching

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_D

Continuous drain current

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

4.8

I_DM

P_D

Pulsed drain current

Total dissipation

T_mb= 25 ˚C

125

± 30

290

∆P_D/∆T_mbLinear derating factor

T_mb≥ 25 ˚C

W/K

V_GS

E_AS

Gate-source voltage

Single pulse avalanche

energy

_DD≤ 50 V; starting T_j= 25˚C; R_GS= 50 Ω;

V_GS= 10 V

_DD≤ 50 V; starting T_j= 25˚C; R_GS= 50 Ω;

V_GS= 10 V

I_AS

Peak avalanche current

3.6

T_j, T_stg

Operating junction and

storage temperature range

- 55

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance junction to

K/W

mounting base

R_{th j-a}

Thermal resistance junction to

ambient

K/W

February 1997

Rev 1.000

12 3 4 5 6 7

中文翻译

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