PHP3N60E

更新时间： 2024-01-07 23:37:07

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
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描述
PowerMOS transistors Avalanche energy rated

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PHP3N60E 数据手册

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHP3N60E, PHB3N60E

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 600 V

I_D= 2.8 A

• Stable off-state characteristics

• High thermal cycling performance

• Low thermal resistance

R_DS(ON)≤ 4.4 Ω

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,

T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching

applications.

The PHP3N60E is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB3N60E is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

tab

gate

drain ¹

source

drain

tab

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

600

± 30

2.8

1.8

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

I_DM

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

P_D

T_mb= 25 ˚C

˚C

T_j, T_stg

- 55

150

December 1998

Rev 1.200

12 3 4 5 6 7...9

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