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PESD5V0S2BQA-Q PDF预览

PESD5V0S2BQA-Q

更新时间: 2024-11-15 17:15:27
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 306K
描述
Protection against high surge currents in ultra small DFN1010D-3 packageProduction

PESD5V0S2BQA-Q 数据手册

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PESD5V0S2BQA-Q  
Protection against high surge currents in ultra small  
DFN1010D-3 package  
13 March 2024  
Product data sheet  
1. General description  
Two bidirectional ElectroStatic Discharge (ESD) protection diodes, designed to protect two signal  
lines from the damage caused by ESD and other transients.  
The device is housed in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device  
(SMD) plastic package with visible and solderable side pads.  
2. Features and benefits  
Bidirectional ESD protection of two lines  
Ultra small SMD plastic package  
ESD protection up to 30 kV  
IEC 61000-4-5 (surge): IPPM = 14 A  
IEC 61000-4-5 (surge): IPPM = 28 A combined lines  
Ultra low leakage current: IRM = 1 nA  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
Portable electronics  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C;  
single line  
[1]  
-
35  
45  
pF  
[1] Measured from pin 1 or 2 to pin 3.  
 
 
 
 
 

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