Datasheet > PESD5V0S2BT-Q

PESD5V0S2BT-Q

更新时间： 2024-11-15 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	223K
描述
Low capacitance bidirectional double ESD protection diodeProduction

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PESD5V0S2BT-Q 数据手册

PESD5V0S2BT-Q

Low capacitance bidirectional double ESD protection diode

24 April 2023

Product data sheet

1. General description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, designed to protect two data

lines from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of two lines

•

Low diode capacitance

Max. peak pulse power: P_PPM= 130 W at t_p= 8/20 µs

Low clamping voltage: V_CL= 14 V at I_PPM= 12 A

Ultra low leakage current: I_RM= 5 nA at V_RWM= 5 V

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM= 12 A at t_p= 8/20 µs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Cellular handsets and accessories

Portable electronics

Computers and peripherals

Communication systems

Audio and video equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

12 3 4 5 6 7...12

中文翻译

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