Datasheet > PESD5V0S2UAT-Q

PESD5V0S2UAT-Q

更新时间： 2023-09-03 20:30:36

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	203K
描述
Double ESD protection diode in SOT23 packageProduction

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PESD5V0S2UAT-Q 数据手册

PESD5V0S2UAT-Q

Double ESD protection diode in SOT23 package

3 May 2022

Product data sheet

1. General description

Unidirectional double ESD protection diode in common cathode configuration in a small SOT23

Surface-Mounted Device (SMD) plastic package, designed to protect up to two data lines against

damage from ElectroStatic Discharge (ESD) and other transients.

2. Features and benefits

•

Unidirectional ESD protection of up to two lines

•

Common-cathode configuration

Max. peak pulse power: P_PPM= 260 W at t_p= 8/20 µs

Ultra-low reverse leakage current: I_RM= 100 nA

ESD protection: 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM= 15 A at t_p= 8/20 µs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Communication systems

Audio and video equipment

Data lines

CAN bus protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_j= 25 °C

[1]

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_j= 25 °C

152

200

[1] Measured across either pins 1 and 3 or pins 2 and 3.

12 3 4 5 6 7...11

中文翻译

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