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PESD5V0U1BL,315 PDF预览

PESD5V0U1BL,315

更新时间: 2024-11-14 18:59:59
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 72K
描述
PESD5V0U1BA; PESD5V0U1BB; PESD5V0U1BL - Ultra low capacitance bidirectional ESD protection diodes DFN 2-Pin

PESD5V0U1BL,315 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:3.61最大击穿电压:9.5 V
最小击穿电压:5.5 V击穿电压标称值:7 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

PESD5V0U1BL,315 数据手册

 浏览型号PESD5V0U1BL,315的Datasheet PDF文件第2页浏览型号PESD5V0U1BL,315的Datasheet PDF文件第3页浏览型号PESD5V0U1BL,315的Datasheet PDF文件第4页浏览型号PESD5V0U1BL,315的Datasheet PDF文件第5页浏览型号PESD5V0U1BL,315的Datasheet PDF文件第6页浏览型号PESD5V0U1BL,315的Datasheet PDF文件第7页 
PESD5V0U1BA;  
PESD5V0U1BB; PESD5V0U1BL  
Ultra low capacitance bidirectional ESD protection diodes  
Rev. 01 — 25 April 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in  
small Surface-Mounted Device (SMD) plastic packages designed to protect one data line  
from the damage caused by ESD.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package  
configuration  
JEITA  
SC-76  
SC-79  
-
PESD5V0U1BA  
PESD5V0U1BB  
PESD5V0U1BL  
SOD323  
SOD523  
SOD882  
very small  
flat lead ultra small  
leadless ultra small  
1.2 Features  
I Bidirectional ESD protection of one line I Ultra low leakage current: IRM = 5 nA  
I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV  
I IEC 61000-4-2; level 4 (ESD)  
1.3 Applications  
I Computers and peripherals  
I Communication systems  
I Portable electronics  
I Subscriber Identity Module (SIM) card  
protection  
I Audio and video equipment  
I Cellular handsets and accessories  
I 10/100/1000 Ethernet  
I FireWire  
I Local Area Network (LAN) equipment  
I High-speed data lines  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Per diode  
VRWM  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse standoff voltage  
diode capacitance  
-
-
-
5
V
Cd  
f = 1 MHz; VR = 0 V  
2.9  
3.5  
pF  
 
 
 
 
 

PESD5V0U1BL,315 替代型号

型号 品牌 替代类型 描述 数据表
ESDALC5-1BT2 STMICROELECTRONICS

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