Datasheet > PESD5V0U2BMB-Q

PESD5V0U2BMB-Q

更新时间： 2023-09-03 20:30:29

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	219K
描述
Ultra low capacitance bidirectional double ESD protection arrayProduction

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PESD5V0U2BMB-Q 数据手册

PESD5V0U2BMB-Q

Ultra low capacitance bidirectional double ESD protection

array

4 October 2022

Product data sheet

1. General description

Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed

to protect up to two signal lines from the damage caused by ESD and other transients. The device

is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•

ESD protection of up to two lines

•

Ultra low diode capacitance: C_d= 2.9 pF

Ultra low leakage current: I_RM= 5 nA

ESD protection up to 10 kV

IEC 61000-4-2; level 4 (ESD)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Communication systems

Portable electronics

SIM card protection

High-speed data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

2.9

3.5

12 3 4 5 6 7...11

中文翻译

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