Datasheet > PESD5V0V1BL

PESD5V0V1BL

更新时间： 2024-11-18 18:09:47

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科信 - KEXIN		/
页数	文件大小	规格书
2页	260K
描述
Bidirectional ESD Protection Diodes

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中文翻译

获取价格

数据手册

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PESD5V0V1BL 数据手册

SMD Type

TVS

ESD Protection Diodes

PESD5V0V1BL

SOD882

Unit:mm

Ƶ Features

ƽ Bidirectional ESD protection of one line

ƽ Very low diode capacitance: Cd = 11 pF

ƽ Max. peak pulse power: PPP = 45 W

ƽ Low clamping voltage: VCL = 12.5 V

ƽ Ultra low leakage current: IRM < 1 nA

ƽ ESD protection up to 30 kV

ƽ IEC 61000-4-2; level 4 (ESD)

ƽ IEC 61000-4-5 (surge); IPP = 4.8 A

Ƶ Absolute Maximum Ratings (TA = 25 °C, unless otherwise specified)

Parameter

Symbol

Value

Unit

Peak Pulse Power

Peak Pulse Current

= 8/20 μs

IPP

4.8

IEC 61000-4-2 Contact

Machine Model

Electrostatic Discharge Voltage

ESD

MIL-STD-883 HBM

Junction and Storage Temperature Range

, Tstg

-55 to +150

Ƶ Electrical Characteristics (T

= 25ć unless otherwise specified.)

Symbol Test Conditions

Parameter

Reverse standoff voltage

Min

Typ

6.8

Max

Unit

RWM

7.8

Breakdown voltage

Reverse leakage current

Diode capacitance

= 5mA

RWM = 5 V

= 0 V, f = 1 MHz

5.8

Clamping voltage ^*1

Dynamic resistance ^*2

Differential resistance

dyn

dif

PP = 4.8 A

12.5

= 10 A

0.2

= 5 mA

*1 Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC 61000-4-5.

*2 Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANS/IESD STM5.1-2008.

Ƶ Marking

Marking

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中文翻译

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