Datasheet > PESD5V0U2BM,315

PESD5V0U2BM,315

更新时间： 2024-02-18 08:50:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	67K
描述
PESD5V0U2BM - Ultra low capacitance bidirectional double ESD protection array DFN 3-Pin

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技术参数
数据手册

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PESD5V0U2BM,315 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFN
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.74	Base Number Matches：	1

PESD5V0U2BM,315 数据手册

PESD5V0U2BM

Ultra low capacitance bidirectional double ESD

protection array

Rev. 01 — 14 August 2008

Product data sheet

BOTTOM VIEW

1. Product proﬁle

1.1 General description

Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode

array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

package designed to protect up to two signal lines from the damage caused by ESD and

other transients.

1.2 Features

I Bidirectional ESD protection of up to

two lines

I Ultra low diode capacitance: C_d= 2.9 pF I IEC 61000-4-2; level 4 (ESD)

I ESD protection up to 10 kV

I Ultra low leakage current: I_RM= 5 nA

I AEC-Q101 qualiﬁed

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

I Cellular handsets and accessories

I 10/100/1000 Mbit/s Ethernet

I Communication systems

I FireWire

I High-speed data lines

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Per diode

Conditions

Min

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

f = 1 MHz; V_R= 0 V

2.9

3.5

12 3 4 5 6 7...11

中文翻译

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