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PESD5V0U1BL

更新时间: 2024-09-30 11:14:55
品牌 Logo 应用领域
安世 - NEXPERIA 局域网测试光电二极管
页数 文件大小 规格书
10页 193K
描述
Low capacitance bidirectional ESD protection diodeProduction

PESD5V0U1BL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.63最大击穿电压:9.5 V
最小击穿电压:5.5 V击穿电压标称值:7 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL参考标准:AEC-Q101; IEC-60134
最大重复峰值反向电压:5 V最大反向电流:0.1 µA
反向测试电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD5V0U1BL 数据手册

 浏览型号PESD5V0U1BL的Datasheet PDF文件第2页浏览型号PESD5V0U1BL的Datasheet PDF文件第3页浏览型号PESD5V0U1BL的Datasheet PDF文件第4页浏览型号PESD5V0U1BL的Datasheet PDF文件第5页浏览型号PESD5V0U1BL的Datasheet PDF文件第6页浏览型号PESD5V0U1BL的Datasheet PDF文件第7页 
PESD5V0U1BL  
Low capacitance bidirectional ESD protection diode  
11 October 2018  
Product data sheet  
1. General description  
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882  
leadless ultra-small plastic package designed to protect one signal line from the damage caused by  
ESD and other transients.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Low diode capacitance: Cd = 2.9 pF  
Ultra low leakage current: IRM = 5 nA  
ESD protection of up to 10 kV  
IEC 61000-4-2, level 4 (ESD)  
AEC-Q101 qualified  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
10/100/1000 Ethernet  
Local Area Network (LAN) equipment  
Communication systems  
Portable electronics  
SIM card protection  
High-speed data lines  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
f = 1 MHz; VR = 5 V; Tamb = 25 °C  
-
-
2.9  
1.9  
3.5  
-
pF  
pF  
 
 
 
 

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