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PESD5V0S2BT

更新时间: 2023-09-03 20:36:19
品牌 Logo 应用领域
安世 - NEXPERIA 局域网光电二极管
页数 文件大小 规格书
12页 205K
描述
Low capacitance bidirectional double ESD protection diodeProduction

PESD5V0S2BT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.37
其他特性:LOW CAPACITANCE最大击穿电压:9.5 V
最小击穿电压:5.5 V击穿电压标称值:7.5 V
最大钳位电压:14 V配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:130 W元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PESD5V0S2BT 数据手册

 浏览型号PESD5V0S2BT的Datasheet PDF文件第2页浏览型号PESD5V0S2BT的Datasheet PDF文件第3页浏览型号PESD5V0S2BT的Datasheet PDF文件第4页浏览型号PESD5V0S2BT的Datasheet PDF文件第5页浏览型号PESD5V0S2BT的Datasheet PDF文件第6页浏览型号PESD5V0S2BT的Datasheet PDF文件第7页 
PESD5V0S2BT  
Low capacitance bidirectional double ESD protection diode  
23 August 2018  
Product data sheet  
1. General description  
Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small  
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two data  
lines from the damage caused by ESD and other transients.  
2. Features and benefits  
Bidirectional ESD protection of two lines  
Low diode capacitance  
Max. peak pulse power: PPPM = 130 W at tp = 8/20 µs  
Low clamping voltage: VCL = 14 V at IPPM = 12 A  
Ultra low leakage current: IRM = 5 nA at VRWM = 5 V  
ESD protection up to 30 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); IPPM = 12 A at tp = 8/20 µs  
AEC-Q101 qualified  
3. Applications  
Cellular handsets and accessories  
Portable electronics  
Computers and peripherals  
Communication systems  
Audio and video equipment  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
35  
45  
pF  
 
 
 
 

PESD5V0S2BT 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0S2BT,215 NXP

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