是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR RATIO 1 | 最大集电极电流 (IC): | 0.02 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PEMB24,115 | NXP |
获取价格 |
PEMB24; PUMB24 - PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SOT 6 | |
PEMB24_09 | NXP |
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PNP/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW | |
PEMB24-115 | PHILIPS |
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Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, PNP, Silicon | |
PEMB3 | NXP |
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PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open | |
PEMB3 | NEXPERIA |
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50 V, 100 mA PNP/PNP Resistor-Equipped Transi | |
PEMB30 | NXP |
获取价格 |
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open | |
PEMB30,115 | NXP |
获取价格 |
PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SO | |
PEMB30,315 | NXP |
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PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SO | |
PEMB4 | NXP |
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PNP resistor-equipped double transistor R1 = 10 kohm, R2 = open | |
PEMB4,115 | NXP |
获取价格 |
PEMB4; PUMB4 - PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open SOT 6-Pin |