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PEMD15 PDF预览

PEMD15

更新时间: 2024-11-15 06:00:15
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 65K
描述
NPN/PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 4.7 kW

PEMD15 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.33Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PEMD15 数据手册

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PEMD15; PUMD15  
NPN/PNP resistor-equipped transistors;  
R1 = 4.7 k, R2 = 4.7 kΩ  
Rev. 03 — 2 September 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP Resistor-Equipped Transistors (RET)  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP/PNP  
complement  
NPN/NPN  
complement  
JEITA  
-
PEMD15  
PUMD15  
SOT666  
SOT363  
PEMB15  
PUMB15  
PEMH15  
PUMH15  
SC-88  
1.2 Features  
I Built-in bias resistors  
I Simplifies circuit design  
I Reduces component count  
I Reduces pick and place costs  
1.3 Applications  
I Low current peripheral driver  
I Control of IC inputs  
I Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
-
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
bias resistor ratio  
open base  
-
-
-
100  
6.1  
1.2  
mA  
k  
R1  
3.3  
0.8  
4.7  
1
R2/R1  

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