是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
风险等级: | 5.77 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 2.1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN AND PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PEMD16,115 | NXP |
获取价格 |
PEMD16; PUMD16 - NPN/PNP resistor-equipped transistors; R1 = 22 k Ohm, R2 = 47 k Ohm SOT 6 | |
PEMD17 | NXP |
获取价格 |
NPN/PNP resistor-equipped transistors | |
PEMD17,115 | NXP |
获取价格 |
PEMD17; PUMD17 - NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm SOT 6-P | |
PEMD18 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACK | |
PEMD18 | PHILIPS |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon | |
PEMD18,115 | NXP |
获取价格 |
PEMD18; PUMD18 - NPN/PNP resistor-equipped tr | |
PEMD19 | NXP |
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NPN/PNP resistor-equipped transistors | |
PEMD19 | PHILIPS |
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Transistor | |
PEMD19,115 | NXP |
获取价格 |
PEMD19; PUMD19 - NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open SOT 6-Pin | |
PEMD2 | NXP |
获取价格 |
NPN/PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm |