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PEMD16 PDF预览

PEMD16

更新时间: 2024-11-16 11:16:07
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
11页 217K
描述
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩProduction

PEMD16 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.77Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 2.1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PEMD16 数据手册

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PEMD16  
50 V, 100 mA NPN/PNP resistor-equipped double transistor;  
R1 = 22 kΩ, R2 = 47 kΩ  
28 December 2022  
Product data sheet  
1. General description  
NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666  
Surface-Mounted Device (SMD) plastic package.  
NPN/NPN complement: PEMH16  
PNP/PNP complement: PEMB16  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplified circuit design  
Reduces component count  
Reduces pick and place costs  
3. Applications  
Low current peripheral driver  
Controlling IC inputs  
Replacement of general purpose transistors in digital applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCEO  
collector-emitter  
voltage  
open base  
-
-
50  
V
IO  
output current  
-
-
100  
28.6  
2.6  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
[1]  
[1]  
15.4  
1.7  
22  
2.1  
R2/R1  
[1] See section "Test information" for resistor calculation and test conditions.  
 
 
 
 
 

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