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PEMD3,115 PDF预览

PEMD3,115

更新时间: 2024-02-17 13:34:09
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
11页 104K
描述
PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ SOT 6-Pin

PEMD3,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PEMD3,115 数据手册

 浏览型号PEMD3,115的Datasheet PDF文件第2页浏览型号PEMD3,115的Datasheet PDF文件第3页浏览型号PEMD3,115的Datasheet PDF文件第4页浏览型号PEMD3,115的Datasheet PDF文件第5页浏览型号PEMD3,115的Datasheet PDF文件第6页浏览型号PEMD3,115的Datasheet PDF文件第7页 
PEMD3; PIMD3; PUMD3  
NPN/PNP resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
Rev. 10 — 15 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP Resistor-Equipped Transistors (RET).  
Table 1. Product overview  
Type number  
Package  
NXP  
PNP/PNP  
complement  
NPN/NPN  
complement  
JEITA  
-
PEMD3  
PIMD3  
PUMD3  
SOT666  
SOT457  
SOT363  
PEMB11  
-
PEMH11  
-
SC-74  
SC-88  
PUMB11  
PUMH11  
1.2 Features  
„ Built-in bias resistors  
„ Simplifies circuit design  
„ Reduces component count  
„ Reduces pick and place costs  
1.3 Applications  
„ Low current peripheral driver  
„ Control of IC inputs  
„ Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
bias resistor ratio  
open base  
-
-
-
-
100  
13  
mA  
kΩ  
R1  
7
10  
1
R2/R1  
0.8  
1.2  
 
 
 
 
 

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