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PEMD24 PDF预览

PEMD24

更新时间: 2024-11-15 06:00:15
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关光电二极管
页数 文件大小 规格书
10页 71K
描述
NPN/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW

PEMD24 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.36其他特性:BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC):0.02 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PEMD24 数据手册

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PEMD24; PUMD24  
NPN/PNP resistor-equipped transistors;  
R1 = 100 k, R2 = 100 kΩ  
Rev. 01 — 2 May 2005  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP Resistor-Equipped Transistors (RET).  
Table 1:  
Product overview  
Type number  
Package  
Philips  
PNP/PNP  
complement  
NPN/NPN  
complement  
JEITA  
-
PEMD24  
PUMD24  
SOT666  
SOT363  
PEMB24  
PUMB24  
PEMH24  
PUMH24  
SC-88  
1.2 Features  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
1.3 Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2:  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
-
Typ  
Max  
50  
Unit  
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
bias resistor ratio  
open base  
-
V
-
-
20  
mA  
k  
R1  
70  
0.8  
100  
1
130  
1.2  
R2/R1  

PEMD24 替代型号

型号 品牌 替代类型 描述 数据表
PEMD24,115 NXP

完全替代

PEMD24; PUMD24 - NPN/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SOT 6

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