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PEMD14 PDF预览

PEMD14

更新时间: 2024-11-16 11:16:07
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
11页 219K
描述
50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = openProduction

PEMD14 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:compliant
风险等级:5.77Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PEMD14 数据手册

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PEMD14  
50 V, 100 mA NPN/PNP resistor-equipped transistor;  
R1 = 47 kΩ, R2 = open  
27 April 2023  
Product data sheet  
1. General description  
NPN/PNP Resistor-Equipped Transistor (RET) in a SOT666 ultra small and flat lead Surface-  
Mounted Device (SMD) plastic package.  
PNP/PNP complement: PEMB14  
NPN/NPN complement: PEMH14  
2. Features and benefits  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place cost  
3. Applications  
Low current peripheral driver  
Control of IC inputs  
Replacement of general-purpose transistors in digital applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
[1]  
-
-
50  
V
IO  
output current  
[1]  
[2]  
-
-
100  
61  
mA  
kΩ  
R1  
bias resistor 1 (input)  
33  
47  
[1] For the PNP transistor with negative polarity.  
[2] See section "Test information" for resistor calculation and test conditions.  
 
 
 
 
 

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