是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOT | 包装说明: | PLASTIC PACKAGE-6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NSBA114EDXV6T1G | ONSEMI |
功能相似 |
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NSBA123TDP6T5G | ONSEMI |
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NSBA123JDP6T5G | ONSEMI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PEMB20-115 | PHILIPS |
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Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon | |
PEMB24 | NXP |
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PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PEMB24 | NEXPERIA |
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PEMB24,115 | NXP |
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PEMB24; PUMB24 - PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SOT 6 | |
PEMB24_09 | NXP |
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PNP/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW | |
PEMB24-115 | PHILIPS |
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Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, PNP, Silicon | |
PEMB3 | NXP |
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PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open | |
PEMB3 | NEXPERIA |
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PEMB30 | NXP |
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PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open | |
PEMB30,115 | NXP |
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PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open SO |