Datasheet > PE4250

PE4250

更新时间： 2024-09-15 12:12:47

品牌	Logo	应用领域
PSEMI		开关光电二极管
页数	文件大小	规格书
9页	226K
描述
SPDT UltraCMOS RF Switch

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PE4250 数据手册

Product Specification

PE4250

SPDT UltraCMOS™ RF Switch

10 – 3000 MHz, Reflective

Product Description

The PE4250 is a HaRP™-enhanced Reflective SPDT (single

pole double throw) RF Switch for use in general switching

applications and mobile infrastructure. This device offers a

flexible supply voltage of 3.3/5V, single-pin or complementary

pin control inputs, and 4000 V ESD tolerance. It presents a

simple alternative solution to pin diode and mechanical relay

switches.

Features

•

HaRP-Technology Enhanced

Low Insertion Loss: 0.65 dB @ 1000 MHz

High Isolation: 51 dB @ 1000 MHz

P1dB typical: +30.5 dBm

IIP3 typical: +59 dBm

Peregrine’s HaRP™ technology enhancements deliver high

linearity and exceptional performance. It is an innovative

feature of the UltraCMOS™ process, providing performance

superior to GaAs with the economy and integration of

conventional CMOS.

Fast switching time: 150 ns

Flexible supply voltage: 3.3 V ±10% or 5.0

V ±10% supply (see table 3)

•

Excellent ESD protection: 4000 V HBM

No blocking capacitors required

Single pin or complementary control inputs

Figure 1. Functional Diagram

RFC

Figure 2. Package Type

8-lead MSOP

RF1

RF2

ESD

CMOS

Control

Driver

V1 V2

Table 1. Target Electrical Specifications Temp = 25°C, V_DD= 3.3 or 5.0 V

Parameter

Conditions

Min

Typical

Max

Units

Operation Frequency¹

3000

0.65

0.70

0.80

0.90

MHz

10 MHz

0.6

0.65

0.75

1000 MHz

2000 MHz

3000 MHz

1000 MHz

2000 MHz

3000 MHz

1000 MHz

2000 MHz

3000 MHz

50 - 3000 MHz

Insertion Loss (RF1/RF2)

Isolation (RFC to RF1/RF2)

Return Loss

Input 1 dB Compression²

Input IP3

30.5

dBm

50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing

50% CTRL to 10/90% RF

Switching Time

150

300

Notes:

1. Device linearity will begin to degrade below 10 MHz.

2. Note Absolute Maximum rating of P_IN= 27 dBm.

Document No. 70-0254-02 │ www.psemi.com

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