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PE42525 PDF预览

PE42525

更新时间: 2024-11-07 01:17:15
品牌 Logo 应用领域
PSEMI 光电二极管
页数 文件大小 规格书
13页 274K
描述
SPDT RF Switch, 9 kHz–60 GHz

PE42525 数据手册

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PE42525  
Document Category: Product Specification  
UltraCMOS® SPDT RF Switch, 9 kHz–60 GHz  
]
Features  
• Wideband support up to 60 GHz  
Figure 1 • PE42525 Functional Diagram  
• Low insertion loss  
RFC  
1.3 dB @ 26.5 GHz  
1.7 dB @ 45 GHz  
1.9 dB @ 50 GHz  
RF1  
RF2  
2.7 dB @ 60 GHz  
• Fast switching time of 8 ns  
• High port to port isolation  
41 dB @ 26.5 GHz  
ESD  
38 dB @ 45 GHz  
37 dB @ 50 GHz  
V1  
V2  
36 dB @ 60 GHz  
• High linearity: IIP3 of 48 dBm  
• Flip-chip die, pin-to-pin compatible to the PE42524  
and the PE426525  
Applications  
Test and measurement  
• Microwave backhaul  
• Radar  
• Military communications  
Product Description  
The PE42525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency  
range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin compatible to the PE42524 and the  
PE426525. It delivers low insertion loss, fast switching time and high isolation performance, making this device  
ideal for test and measurement (T&M), microwave backhaul, radar and military communications (mil-comm)  
applications. At 50 GHz, the PE42525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors  
are required if DC voltage is not present on the RF ports.  
The PE42525 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator  
(SOI) technology.  
©2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121  
Product Specification  
DOC-64730-3 – (12/2016)  
www.psemi.com  

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