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PE42562A-X PDF预览

PE42562A-X

更新时间: 2024-11-10 01:17:15
品牌 Logo 应用领域
PSEMI 射频微波
页数 文件大小 规格书
20页 796K
描述
SP6T RF Switch, 9 kHz–8 GHz

PE42562A-X 数据手册

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PE42562  
Document Category: Product Specification  
UltraCMOS® SP6T RF Switch, 9 kHz–8 GHz  
Features  
Figure 1 • PE42562 Functional Diagram  
• High isolation: 35 dB @ 6 GHz  
• Low insertion loss: 1.1 dB @ 6 GHz  
• Fast switching time of 210 ns  
• Power handling of 33 dBm CW  
RFC  
RF6  
RF5  
RF4  
RF1  
RF2  
RF3  
• Logic select (LS) pin provides maximum control  
logic flexibility  
Terminated all-off state mode  
• External VSS pin to eliminate spur  
• Packaging – 24-lead 4 × 4 × 0.85 mm QFN  
CMOS Control  
Driver and ESD  
switch  
configuration  
V1 V2 V3 VSS_EXT  
Applications  
Test and measurement  
• Wireless applications up to 8 GHz  
• Filter bank switching  
50Ω  
• RF signal routing  
Product Description  
The PE42562 is a HaRP™ technology-enhanced absorptive SP6T RF switch that supports a frequency range  
from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in  
order for the PE42562 to deliver spur-free performance. It delivers high isolation, low insertion loss and fast  
switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement  
(T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on  
the RF ports.  
The PE42562 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-on-  
insulator (SOI) technology.  
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an  
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and  
integration of conventional CMOS.  
©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121  
Product Specification  
DOC-75951-3 – (03/2017)  
www.psemi.com  

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