Datasheet > PE42553A-Z

PE42553A-Z

更新时间： 2024-11-07 01:17:07

品牌	Logo	应用领域
PSEMI		分离技术隔离技术射频微波光电二极管
页数	文件大小	规格书
19页	3897K
描述
UltraCMOS SPDT RF Switch, 9 kHz-8 GHz

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PE42553A-Z 数据手册

PE42553

Product Specification

UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz

Features

Applications

• Test and measurement

• Excellent power handling: 36 dBm CW and 38 dBm

pulsed power in 50Ω @ 8 GHz

▪ Signal sources

• High linearity: IIP3 of 66 dBm

• High isolation

▪ Communication testers

▪ Spectrum analyzers

▪ 45 dB @ 3 GHz

▪ Network analyzers

▪ 41 dB @ 8 GHz

• Automated test equipment

• General purpose TX/RX switch

• HaRP™ technology enhanced

▪ Fast settling time

Figure 1 • PE42553 Functional Diagram

▪ No gate and phase lag

▪ No drift in insertion loss and phase

• High ESD performance

RFC

▪ 2.5 kV HBM on all pins, 4 kV HBM on RF pins to

GND

▪ 1 kV CDM on all pins

RF1

RF2

• Packaging – 16-lead 3 × 3 mm QFN

50Ω

CMOS Control Driver and ESD

CTRL V_{SS_EXT}

Product Description

The PE42553 is a HaRP^TMtechnology-enhanced absorptive SPDT RF switch that supports a broad frequency

range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and

fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)

and other high performance wireless applications.

The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm

continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC

voltage is not present on the RF ports. The PE42553 is manufactured on Peregrine’s UltraCMOS^®process, a

patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.

Product Specification

DOC-62463-2 – (11/2014)

www.psemi.com

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