Product Specification
PE4250
SPDT UltraCMOS™ RF Switch
10 – 3000 MHz, Reflective
Product Description
The PE4250 is a HaRP™-enhanced Reflective SPDT (single
pole double throw) RF Switch for use in general switching
applications and mobile infrastructure. This device offers a
flexible supply voltage of 3.3/5V, single-pin or complementary
pin control inputs, and 4000 V ESD tolerance. It presents a
simple alternative solution to pin diode and mechanical relay
switches.
Features
•
•
•
•
•
•
•
HaRP-Technology Enhanced
Low Insertion Loss: 0.65 dB @ 1000 MHz
High Isolation: 51 dB @ 1000 MHz
P1dB typical: +30.5 dBm
IIP3 typical: +59 dBm
Peregrine’s HaRP™ technology enhancements deliver high
linearity and exceptional performance. It is an innovative
feature of the UltraCMOS™ process, providing performance
superior to GaAs with the economy and integration of
conventional CMOS.
Fast switching time: 150 ns
Flexible supply voltage: 3.3 V ±10% or 5.0
V ±10% supply (see table 3)
•
•
•
Excellent ESD protection: 4000 V HBM
No blocking capacitors required
Single pin or complementary control inputs
Figure 1. Functional Diagram
RFC
Figure 2. Package Type
8-lead MSOP
RF1
RF2
ESD
ESD
CMOS
Control
Driver
V1 V2
Table 1. Target Electrical Specifications Temp = 25°C, VDD = 3.3 or 5.0 V
Parameter
Conditions
Min
Typical
Max
Units
Operation Frequency1
10
3000
0.65
0.70
0.80
0.90
MHz
dB
10 MHz
0.6
0.65
0.75
0.75
51
1000 MHz
2000 MHz
3000 MHz
1000 MHz
2000 MHz
3000 MHz
1000 MHz
2000 MHz
3000 MHz
50 - 3000 MHz
dB
dB
dB
Insertion Loss (RF1/RF2)
50
46
35
dB
dB
dB
Isolation (RFC to RF1/RF2)
Return Loss
48
40
25
23
dB
dB
20
dB
Input 1 dB Compression2
Input IP3
30.5
59
dBm
dBm
50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing
50% CTRL to 10/90% RF
Switching Time
150
300
ns
Notes:
1. Device linearity will begin to degrade below 10 MHz.
2. Note Absolute Maximum rating of PIN = 27 dBm.
Document No. 70-0254-02 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
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