Datasheet > PE42510A

PE42510A

更新时间： 2024-11-06 10:14:31

品牌	Logo	应用领域
PSEMI		开关光电二极管
页数	文件大小	规格书
7页	376K
描述
SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz

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PE42510A 数据手册

Product Specification

PE42510A

SPDT High Power UltraCMOS™

RF Switch 30 - 2000 MHz

Product Description

Features

The following specification defines an SPDT (single pole

double throw) switch for use in cellular and other wireless

applications. The PE42510A uses Peregrine’s UltraCMOS™

process and it also features HaRP™ technology

enhancements to deliver high linearity and exceptional

harmonics performance. HaRP™ technology is an innovative

feature of the UltraCMOS™ process providing upgraded

linearity performance.

•

No blocking capacitors required

50 Watt P1dB compression point

10 Watts <8:1 VSWR (Normal

Operation)

•

29 dB Isolation @800 MHz

< 0.3 dB Insertion Loss at 800 MHz

2f_oand 3f_o< -84 dBc @ 42.5 dBm

ESD rugged to 2.0 kV HBM

The PE42510A is manufactured on Peregrine’s UltraCMOS™

process, a patented variation of silicon-on-insulator (SOI)

technology on a sapphire substrate, offering the performance

of GaAs with the economy and integration of conventional

CMOS.

32-lead 5x5 mm QFN package

Figure 1. Functional Diagram

Figure 2. Package Type

32-lead 5x5 mm QFN

RFC

RF1

RF2

CMOS

Control Driver

and ESD

CTRL

Table 1. Electrical Specifications @ 25 °C, V_DD= 3.3 V (Z_S= Z_L= 50 Ω) unless otherwise noted

Parameter

Conditions

Min

Typ

Max

Units

30 MHz ≤ 1 GHz

1 GHz < 2 GHz

0.4

0.5

0.6

0.7

RF Insertion Loss

0.1 dB Input Compression Point

800 MHz, 50% duty cycle

800 MHz

45.4

dBm

Isolation (Supply Biased): RF to RFC

Unbiased Isolation: RF - RFC, V_DD, V1=0 V

RF (Active Port) Return Loss

27 dBm, 800 MHz

2nd Harmonic

3rd Harmonic

800 MHz @ +42.5 dBm

-84

-81

0.5

dBc

Switching Time

50% of CTRL to 10/90% of RF

No RF applied

0.04

Lifetime switch cycles

10^10

cycles

Note: The device was matched with 1.6 nH inductance per RF port

Document No. 70-0266-01 │ www.psemi.com

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