Datasheet > PE42512A-X

PE42512A-X

更新时间： 2024-11-07 01:17:15

品牌	Logo	应用领域
PSEMI		/
页数	文件大小	规格书
25页	1185K
描述
SP12T RF Switch, 9 kHzâ8 GHz

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PE42512A-X 数据手册

PE42512

Document Category: Product Specification

UltraCMOS® SP12T RF Switch, 9 kHz–8 GHz

Features

Figure 1 • PE42512 Functional Diagram

• High isolation: 39 dB @ 6 GHz

• Low insertion loss: 1.3 dB @ 6 GHz

• Fast switching time of 232 ns

• Power handling of 33 dBm CW

RFC

RF12

RF11

RF10

RF9

RF1

RF2

RF3

RF4

RF5

RF6

• Logic select (LS) pin provides maximum control

logic flexibility

• Terminated all-off state mode

• External V_SSpin to eliminate spur

• Packaging – 32-lead 5 × 5 × 0.85 mm QFN

RF8

RF7

Applications

CMOS Control

Driver and ESD

• Test and measurement

• Wireless applications up to 8 GHz

• Filter bank switching

• RF signal routing

switch

configuration

V1 V2 V3 V4 V_{SS_EXT}

50Ω

Product Description

The PE42512 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range

from 9 kHz to 8 GHz. An external V_SSpin is available for bypassing the internal negative voltage generator in

order for the PE42512 to deliver spur-free performance. It delivers high isolation, low insertion loss, and fast

switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement

(T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on

the RF ports.

The PE42512 is manufactured on Peregrine’s UltraCMOS^®process, a patented advanced form of silicon-on-

insulator (SOI) technology.

Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an

innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and

integration of conventional CMOS.

Product Specification

DOC-76034-3 – (03/2017)

www.psemi.com

12 3 4 5 6 7...25

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