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PE42510AMLI PDF预览

PE42510AMLI

更新时间: 2024-11-05 10:14:31
品牌 Logo 应用领域
PSEMI 开关射频微波光电二极管
页数 文件大小 规格书
7页 376K
描述
SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz

PE42510AMLI 数据手册

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Product Specification  
PE42510A  
SPDT High Power UltraCMOS™  
RF Switch 30 - 2000 MHz  
Product Description  
Features  
The following specification defines an SPDT (single pole  
double throw) switch for use in cellular and other wireless  
applications. The PE42510A uses Peregrine’s UltraCMOS™  
process and it also features HaRP™ technology  
enhancements to deliver high linearity and exceptional  
harmonics performance. HaRP™ technology is an innovative  
feature of the UltraCMOS™ process providing upgraded  
linearity performance.  
No blocking capacitors required  
50 Watt P1dB compression point  
10 Watts <8:1 VSWR (Normal  
Operation)  
29 dB Isolation @800 MHz  
< 0.3 dB Insertion Loss at 800 MHz  
2fo and 3fo < -84 dBc @ 42.5 dBm  
ESD rugged to 2.0 kV HBM  
The PE42510A is manufactured on Peregrine’s UltraCMOS™  
process, a patented variation of silicon-on-insulator (SOI)  
technology on a sapphire substrate, offering the performance  
of GaAs with the economy and integration of conventional  
CMOS.  
32-lead 5x5 mm QFN package  
Figure 1. Functional Diagram  
Figure 2. Package Type  
32-lead 5x5 mm QFN  
RFC  
RF1  
RF2  
CMOS  
Control Driver  
and ESD  
CTRL  
Table 1. Electrical Specifications @ 25 °C, VDD = 3.3 V (ZS = ZL = 50 ) unless otherwise noted  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
30 MHz 1 GHz  
1 GHz < 2 GHz  
0.4  
0.5  
0.6  
0.7  
dB  
dB  
RF Insertion Loss  
0.1 dB Input Compression Point  
800 MHz, 50% duty cycle  
800 MHz  
45.4  
29  
dBm  
dB  
Isolation (Supply Biased): RF to RFC  
25  
5
Unbiased Isolation: RF - RFC, VDD, V1=0 V  
RF (Active Port) Return Loss  
27 dBm, 800 MHz  
dB  
dB  
15  
22  
2nd Harmonic  
3rd Harmonic  
800 MHz @ +42.5 dBm  
-84  
-81  
0.5  
dBc  
Switching Time  
50% of CTRL to 10/90% of RF  
No RF applied  
0.04  
ms  
Lifetime switch cycles  
10^10  
cycles  
Note: The device was matched with 1.6 nH inductance per RF port  
Document No. 70-0266-01 www.psemi.com  
©2008 Peregrine Semiconductor Corp. All rights reserved.  
Page 1 of 7  

PE42510AMLI 替代型号

型号 品牌 替代类型 描述 数据表
PE42510AMLI-Z PSEMI

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SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz

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